石墨烯单层基底

[文献阅读技巧] 如何从一篇文献找到更多的有用信息

不褶皱、单取向、单层石墨烯...

[导读] 通常我们鼓励学生平时多阅读Science和Nature（《科学》和《自然》杂质）的期刊，但是如果仅仅是为了阅读获得知识，还是不够的，因为我们的最终目的是通过大量的阅读从而掌握最根本的未解决的科学问题。假如对某个方面不是很了解，但是又希望深入研究并获得更具有创造意义的new idea。这时，你需要的是一些基本的研究技巧，这里特别强调的是文献及信息的获取技巧。下面从一篇2013年发表在Science上的关于“无褶皱、单取向单层石墨烯材料的制备”文献入手，然后通过利用Web of Science的检索，获得该论文被引用的情况，并从查出的它引论文中找到更多的有用信息。

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无褶皱、单取向单层石墨烯材料的制备。无褶皱、单取向单层石墨烯材料的制备在无线电频率晶体管、高速光电探测器和光调制器等领域具有十分重要的潜在应用前景。Kim(Kim, Park et al. 2013)等人在科学杂志上（Science, 2013,342: 833-836）报道了这种不起皱、单取向单层石墨的制备工艺，可改善石墨烯在铜箔上生长时起皱和取向不好的问题。制备过程如图所示。

Schematicof a method for transferring graphene directly from a SiC surface onto a SiO2/Si wafer. Anadhesive-strained layer (Ni) is deposited on graphene grown on a SiC wafer. Thegraphene/Ni layer is exfoliated by using a handling layer (thermalrelease tape) for transfer.(Kim,Park et al. 2013)

图1 一种从SiC表面直接转移石墨烯到一个SiO2/硅片的方法。一个粘紧的镍层被沉积到生长了石墨烯的SiC（碳化硅）片上，然后石墨烯/镍层被剥离并转移到处理层（热释放胶带）。

图2 Schematic of a method for removing double-layer stripesfrom graphene exfoliated from a SiC substrate. A second adhesive-strained layer(Au) is deposited on the graphene/Ni/tape stack that is exfoliated from the SiCsubstrate. The graphene stripes forming double layers are selectively removedby Au, and the complete monolayer graphene sheet without the stripes is thentransferred onto a SiO2/Si substrate (A-2). The removed graphene stripes arealso transferred onto another substrate (A-3). (Kim,Park et al. 2013)

图2 一种用双层胶带从SiC基底剥离石墨烯的方法。第二个粘紧层（金）被沉积到石墨烯/镍/胶带的、刚刚与SiC基底剥离的那一面上（就是在石墨烯表面上沉积金），石墨烯带从双层中有选择的被金层带走，那么完整的不含带状结构的石墨烯单层被转移到了SiO2/Si基底上（A-2）。被移走的石墨烯带也被转移到了另外的基底上（A-3）。

从该文可知，获得无褶皱、单取向单层的石墨烯很重要，但由于不清楚这方面的研究到底有没有前途，这时需要看看被什么样的论文引用了。接下来，建议大家登陆web of science网站，然后输入上面的文献的题目，搜索后得到的结果如下图所示。

由上图可知，该论文被27篇论文引用了（图中右手边的Times Cited就是被引用的次数）。这时，点击引用的“27”数字就可以获得这27篇论文到底是讲什么的，详细信息如下。

1.

Synthesisof Thin-Layered Molybdenum Disulfide-Based Polyaniline Nanointerfaces forEnhanced Direct Electrochemical DNA Detection

By: Yang, Tao; Meng, Le; Chen, Huaiyin; et al.

ADVANCED MATERIALS INTERFACES  Volume: 3   Issue: 7    Article Number: 1500700   Published: APR 8 2016

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Times Cited: 1
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2.

Selective exfoliation ofsingle-layer graphene from non-uniform graphene grown on Cu

By: Lim, Jae-Young; Lee, Jae-Hyun; Jang,Hyeon-Sik; et al.

NANOTECHNOLOGY  Volume: 26  Issue: 45     Article Number: 455304  Published: NOV 13 2015

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Times Cited: 1
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3.

Effect of Growth Pressure onEpitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical VaporDeposition

By: Cai, Shuxian; Liu, Zhonghua;Zhong, Ni; et al.

MATERIALS  Volume: 8  Issue: 9   Pages: 5586-5596   Published: SEP2015

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Times Cited: 0
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4.

Towards Wafer-Scale MonocrystallineGraphene Growth and Characterization

By: Nguyen, Van Luan; Lee, Young Hee

SMALL  Volume: 11  Issue: 29   Pages: 3512-3528   Published: AUG 52015

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Times Cited: 4
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5.

Three-Dimensional Integration ofGraphene via Swelling, Shrinking, and Adaptation

By: Choi, Jonghyun; Kim, Hoe Joon;Wang, Michael Cai; et al.

NANO LETTERS  Volume: 15  Issue: 7   Pages: 4525-4531   Published: JUL2015

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Times Cited: 2
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6.

Wafer-scale homogeneity of transportproperties in epitaxial graphene on SiC

By: Yager, Tom; Lartsev, Arseniy;Yakimova, Rositsa; et al.

CARBON  Volume: 87  Pages: 409-414   Published: JUN 2015

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Times Cited: 6
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7.

Stress engineering using low oxygenbackground pressures during Volmer-Weber growth of polycrystalline nickel films

By: Yu, Hang Z.; Thompson, Carl V.

JOURNAL OF VACUUM SCIENCE &TECHNOLOGY A  Volume: 33   Issue: 2    Article Number: 021504   Published: MAR 2015

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Times Cited: 0
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8.

Metal-assisted exfoliation (MAE):green, roll-to-roll compatible method for transferring graphene to flexiblesubstrates

By: Zaretski, Aliaksandr V.;Moetazedi, Herad; Kong, Casey; et al.

NANOTECHNOLOGY  Volume: 26  Issue: 4     Article Number: 045301  Published: JAN 30 2015

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Times Cited: 1
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9.

Influence of a gold substrate on theoptical properties of graphene

By: Matkovic, Aleksandar; Chhikara,Manisha; Milicevic, Marijana; et al.

JOURNAL OF APPLIED PHYSICS  Volume:117   Issue: 1     Article Number: 015305  Published: JAN 7 2015

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Times Cited: 2
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10.

Water-mediated and instantaneoustransfer of graphene grown at 220 degrees C enabled by a plasma

By: van der Laan, Timothy; Kumar,Shailesh; Ostrikov, Kostya (Ken)

NANOSCALE  Volume: 7  Issue: 48   Pages: 20564-20570   Published:2015

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Times Cited: 1
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11.

Usingwafer-scale epitaxial graphene for producing twisted bilayers with controlledtwist angle for electronics applications

By: Dimitrakopoulos, Christos D.

Edited by: Razeghi, M; Ghazinejad, M; Bayram, C; et al.

Conference: Conference on Carbon Nanotubes, Graphene, and Emerging 2DMaterials for Electronic and Photonic Devices VIII Location: San Diego, CADate: AUG 09-12, 2015
Sponsor(s): SPIE

CARBON NANOTUBES, GRAPHENE, AND EMERGING 2D MATERIALS FOR ELECTRONIC ANDPHOTONIC DEVICES VIII  Book Series: Proceedings of SPIE  Volume: 9552     Article Number: 955203  Published: 2015

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Times Cited: 0
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12.

LiquidPhase Growth of the Graphene using GaxNi1-x System as Catalys

By: Qi, Lin; Yu, Qiang; Cao, Bing; et al.

Edited by: Gao, Y

Conference: International Conference on Chemical, Material and Food Engineering(CMFE) Location: Kunming, PEOPLES R CHINA Date: JUL 25-26, 2015
Sponsor(s): Chongqing Univ; Hubei Unive Technol; Wuhan Textile Univ; TianjinUniv; East China Normal Univ; Birmingham City Univ

PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON CHEMICAL, MATERIAL AND FOODENGINEERING  Book Series: AER-Advances in Engineering Research  Volume: 22   Pages: 322-325   Published: 2015

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Times Cited: 0
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13.

Processesfor non-destructive transfer of graphene: widening the bottleneck for industrialscale production

By: Zaretski, Aliaksandr V.; Lipomi, Darren J.

NANOSCALE  Volume: 7   Issue: 22   Pages:9963-9969   Published: 2015

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Times Cited: 2
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14.

Scienceand technology roadmap for graphene, related two-dimensional crystals, andhybrid systems

By: Ferrari, Andrea C.; Bonaccorso, Francesco; Fal'ko, Vladimir; et al.

NANOSCALE  Volume: 7   Issue: 11   Pages:4598-4810   Published: 2015

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Times Cited: 154
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15.

Determinationof the adhesion energy of graphene on SiC(0001) via measurement of pleatdefects

By: Wells, G. H.; Hopf, T.; Vassilevski, K. V.; et al.

APPLIED PHYSICS LETTERS  Volume: 105   Issue: 19    Article Number: 193109   Published: NOV 10 2014

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Times Cited: 2
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16.

Etchant-freeand damageless transfer of monolayer and bilayer graphene grown on SiC

By: Tanabe, Shinichi; Furukawa, Kazuaki; Hibino, Hiroki

JAPANESE JOURNAL OF APPLIED PHYSICS  Volume: 53  Issue: 11     Article Number: 115101  Published: NOV 2014

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Times Cited: 0
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17.

UltraconformalContact Transfer of Monolayer Graphene on Metal to Various Substrates

By: Jung, Wonsuk; Kim, Donghwan; Lee, Mingu; et al.

ADVANCED MATERIALS  Volume: 26   Issue: 37  Pages: 6394-6400   Published: OCT 8 2014

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Times Cited: 12
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18.

Toward300 mm Wafer-Scalable High-Performance Polycrystalline Chemical Vapor DepositedGraphene Transistors

By: Rahimi, Somayyeh; Tao, Li; Chowdhury, Sk Fahad; et al.

ACS NANO  Volume: 8   Issue: 10   Pages:10471-10479   Published: OCT 2014

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Times Cited: 16
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19.

PolycrystallineGraphene with Single Crystalline Electronic Structure

By: Brown, Lola; Lochocki, Edward B.; Avila, Jose; et al.

NANO LETTERS  Volume: 14   Issue: 10  Pages: 5706-5711   Published: OCT 2014

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Times Cited: 13
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20.

Electronicand magnetic properties of fluorinated graphene sheets with divacancysubstitutional doping

By: Xu Lei; Dai Zhen-Hong; Sui Peng-Fei; et al.

ACTA PHYSICA SINICA  Volume: 63   Issue: 18    Article Number: 186101   Published: SEP 202014

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21.

Principleof direct van der Waals epitaxy of single-crystalline films on epitaxialgraphene

By: Kim, Jeehwan; Bayram, Can; Park, Hongsik; et al.

NATURE COMMUNICATIONS  Volume: 5     ArticleNumber: 4836   Published: SEP 2014

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Times Cited: 20
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22.

Metal-film-assistedultra-clean transfer of single-walled carbon nanotubes

By: He, Yujun; Li, Dongqi; Li, Tianyi; et al.

NANO RESEARCH  Volume: 7   Issue: 7   Pages:981-989   Published: JUL 2014

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Times Cited: 5
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23.

Graphenefrom Amorphous Titanium Carbide by Chlorination under 200 degrees C andAtmospheric Pressures

By: Peng, Tao; Kou, Zongkui; Wu, Hui; et al.

SCIENTIFIC REPORTS  Volume: 4     ArticleNumber: 5494   Published: JUN 30 2014

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Times Cited: 4
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24.

Solidargon as a possible substrate for quasi-freestanding silicene

By: Sattar, S.; Hoffmann, R.; Schwingenschloegl, U.

NEW JOURNAL OF PHYSICS  Volume: 16    Article Number: 065001   Published: JUN 32014

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Times Cited: 9
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25.

Directfabrication of graphene on SiO2 enabled by thin film stress engineering

By: McNerny, Daniel Q.; Viswanath, B.; Copic, Davor; et al.

SCIENTIFIC REPORTS  Volume: 4     ArticleNumber: 5049   Published: MAY 23 2014

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Times Cited: 8
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26.

Wafer-ScaleGrowth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-TerminatedGermanium

By: Lee, Jae-Hyun; Lee, Eun Kyung; Joo, Won-Jae; et al.

SCIENCE  Volume: 344   Issue: 6181   Pages:286-289   Published: APR 18 2014

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Times Cited: 145
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27.

Afacile process for soak-and-peel delamination of CVD graphene from substratesusing water

By: Gupta, Priti; Dongare, Pratiksha D.; Grover, Sameer; et al.

SCIENTIFIC REPORTS  Volume: 4     ArticleNumber: 3882   Published: JAN 24 2014

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对以上内容进行逐条阅读，先阅读论文题目，然后关注这些论文的出版时间及被引用情况。从web of science的检索结果看（上面用黄色荧光标出的地方），用于DNA检测方面的论文是2016年4月8日发表的，但是已经被引用了1次了（搞生物就是热门啊！），由此可见，平整的、单取向、单层石墨烯在DNA检测方面有应用前景；另外，发现了两篇被引用率差不多是150次的论文，编号是分别是14及编号是26的那两篇，其中具有提供研究思路的是编号为26的“Wafer-Scale Growth of Single-Crystal Monolayer Grapheneon Reusable Hydrogen-Terminated Germanium”。然后点击这篇26号文献的全文，阅读之后发现它成功制备了单晶、单层石墨烯！然后再看它发在哪个期刊上，发现是发到了Science上了，果然是一篇具有很好idea的文章。这篇文献的研究结果如下图所示，生长的单晶单层石墨烯很规整！

通过今天的学习，不知道你们掌握了如何从一篇论文入手，找到更多有意思的信息了吗？祝你们工作、学习进步！

欢迎个人转载，公众号转载请注明出处，谢谢。

文献出处：Kim, J., H. Park, et al. (2013). "Layer-ResolvedGraphene Transfer via Engineered Strain Layers." Science342: 833-836.（题目：通过工程应变层解决石墨烯的转移）